Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정현준 | - |
dc.date.accessioned | 2022-08-04T04:51:40Z | - |
dc.date.available | 2022-08-04T04:51:40Z | - |
dc.date.issued | 2020-10 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, no. 10, page. 4250-4255 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/9179008 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/172087 | - |
dc.description.abstract | Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO2 gate insulators synthesized via plasma-enhanced chemical vapor deposition (PECVD, device A) or PEALD (device B). The electrical performance of B devices was higher than that of device A. The mobilities of A and B deviceswere 19.39 and 21.11 cm(2)/Vs, and the subthreshold slopes were 0.25 and 0.22 V/decade, respectively. In addition, the device reliability of A devices shows an abnormal threshold voltage (V-th) shift of -1.25 V under positive bias temperature stress (PBTS), caused by hydrogen diffusion from the gate insulator to the channel region near the source/drain electrode. However, B devices had a normal Vth shift of +2.87 V. X-ray photoelectron spectroscopy (XPS) and Fourier-transforminfrared spectroscopy (FT-IR) results showed that PECVD SiO2 has a large amount of hydrogen bonding, such as Si-OH, compared to PEALD SiO2. Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) measurement results confirmed that the hydrogen content of PECVD SiO2 was 2.24%, whereas that of PEALD SiO2 was lower at 1.45%. | en_US |
dc.description.sponsorship | This work was supported in part by the Ministry of Trade, Industry & Energy (MOTIE) through the Industry Technology Research and Development Program; in part by Korea Display Research Corporation (KDRC) under Grant 10052020 and Grant 10052027; and in part by Hanyang University under Grant HY-2020. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Oxide semiconductor | en_US |
dc.subject | plasma-enhanced atomic layer deposition (PEALD) | en_US |
dc.subject | subchannel formation by hydrogen diffusion | en_US |
dc.subject | thin-film transistors (TFTs) | en_US |
dc.title | Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 67 | - |
dc.identifier.doi | 10.1109/TED.2020.3017145 | - |
dc.relation.page | 4250-4255 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | Jeong, Seok-Goo | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Choi, Wan-Ho | - |
dc.contributor.googleauthor | Kim, KyoungRok | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2020053787 | - |
dc.sector.campus | S | - |
dc.sector.daehak | RESEARCH INSTITUTE[S] | - |
dc.sector.department | INFORMATION DISPLAY & SEMICONDUCTOR RESEARCH INSTITUTE | - |
dc.identifier.pid | msehyunjun | - |
dc.identifier.orcid | https://orcid.org/0000-0001-6419-4420 | - |
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