Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods
- Title
- Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods
- Author
- 박태주
- Issue Date
- 2021-05
- Publisher
- Kluwer Academic Publishers
- Citation
- Journal of Materials Science: Materials in Electronics, v. 32, NO 9, Page. 12490-12502
- Abstract
- In recent years, resistive switching memory devices are attracted much attention
for high-density non-volatile memory applications owing to their cell scalability,
multilevel operations, and 3D capability in crossbar memory arrays. In this
work, we report the forming-free and multilevel resistive switching properties
of hydrothermally synthesized hexagonal molybdenum oxide (h-MoO3)
microrods. The formation of h-MoO3 microrods was confirmed by using the
X-ray diffraction technique and scanning electron microscopy. Different chemical properties of h-MoO3 microrods were determined by energy-dispersive
X-ray, photoluminescence, Raman, and X-ray photoelectron spectroscopic
techniques. The memory device was fabricated in a Ti/MoO3/FTO structure
and its bipolar resistive switching properties were investigated. The memory
device shows voltage-dependent tunable I-V properties and shows electroforming-free operation. Moreover, we have calculated the different memristive
properties and showed that the device possesses double-valued charge-magnetic flux characteristics, suggesting the dominance of memristive properties in
the Ti/MoO3/FTO device. We further explored the multilevel resistive
switching property of the device by varying the RESET voltage. The Ti/MoO3/
FTO memristive device can able to show four distinct resistive states during
endurance and retention tests. The statistical analysis suggested that the device
has less variation during the cycle-to-cycle operation. The device conduction mechanism was obtained by fitting different charge transport models, and a
possible resistive switching mechanism is presented based on the observed
multilevel resistive switching effect of the Ti/MoO3/FTO memristive device.
- URI
- https://link.springer.com/article/10.1007/s10854-021-05883-whttps://repository.hanyang.ac.kr/handle/20.500.11754/171721
- ISSN
- 09574522; 1573482X
- DOI
- 10.1007/s10854-021-05883-w
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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