Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2022-07-27T00:52:39Z | - |
dc.date.available | 2022-07-27T00:52:39Z | - |
dc.date.issued | 2021-05 | - |
dc.identifier.citation | Journal of Materials Science: Materials in Electronics, v. 32, NO 9, Page. 12490-12502 | en_US |
dc.identifier.issn | 09574522 | - |
dc.identifier.issn | 1573482X | - |
dc.identifier.uri | https://link.springer.com/article/10.1007/s10854-021-05883-w | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/171721 | - |
dc.description.abstract | In recent years, resistive switching memory devices are attracted much attention for high-density non-volatile memory applications owing to their cell scalability, multilevel operations, and 3D capability in crossbar memory arrays. In this work, we report the forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide (h-MoO3) microrods. The formation of h-MoO3 microrods was confirmed by using the X-ray diffraction technique and scanning electron microscopy. Different chemical properties of h-MoO3 microrods were determined by energy-dispersive X-ray, photoluminescence, Raman, and X-ray photoelectron spectroscopic techniques. The memory device was fabricated in a Ti/MoO3/FTO structure and its bipolar resistive switching properties were investigated. The memory device shows voltage-dependent tunable I-V properties and shows electroforming-free operation. Moreover, we have calculated the different memristive properties and showed that the device possesses double-valued charge-magnetic flux characteristics, suggesting the dominance of memristive properties in the Ti/MoO3/FTO device. We further explored the multilevel resistive switching property of the device by varying the RESET voltage. The Ti/MoO3/ FTO memristive device can able to show four distinct resistive states during endurance and retention tests. The statistical analysis suggested that the device has less variation during the cycle-to-cycle operation. The device conduction mechanism was obtained by fitting different charge transport models, and a possible resistive switching mechanism is presented based on the observed multilevel resistive switching effect of the Ti/MoO3/FTO memristive device. | en_US |
dc.description.sponsorship | This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (Grant No. 10080581)) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Kluwer Academic Publishers | en_US |
dc.title | Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 32 | - |
dc.identifier.doi | 10.1007/s10854-021-05883-w | - |
dc.relation.page | 12490-12502 | - |
dc.relation.journal | Journal of Materials Science: Materials in Electronics | - |
dc.contributor.googleauthor | Patil, Swapnil R. | - |
dc.contributor.googleauthor | Mullani, Navaj B. | - |
dc.contributor.googleauthor | Kamble, Bhagyashri B. | - |
dc.contributor.googleauthor | Tayade, Shivaji N. | - |
dc.contributor.googleauthor | Kamat, Rajanish K. | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.contributor.googleauthor | Kim, Deok-kee | - |
dc.contributor.googleauthor | Dongale, Tukaram D. | - |
dc.relation.code | 2021026740 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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