Wafer-Scale Growth of a MoS2 Monolayer via One Cycle of Atomic Layer Deposition: An Adsorbate Control Method
- Title
- Wafer-Scale Growth of a MoS2 Monolayer via One Cycle of Atomic Layer Deposition: An Adsorbate Control Method
- Author
- 박태주
- Keywords
- Materials Chemistry; General Chemical Engineering; General Chemistry
- Issue Date
- 2021-06
- Publisher
- AMER CHEMICAL SOC
- Citation
- CHEMISTRY OF MATERIALS, v. 33, NO 11, Page. 4099-4105
- Abstract
- Monolayer transition metal dichalcogenide corn pounds with two-dimensional (2D) layered structures may be used as next-generation active materials for electronic and optoelectronic devices. A reliable method for creating high-quality, waferscale material with well-controlled large-area growth is required for industrial applications. Two-dimensional material atomic layer deposition (ALD) can be used as an atomically flat monolayer film, but its deposition characteristics limit perfect monolayer formation. Herein, we propose a novel ALD chemical route for uniform monolayer MoS2 film deposition at the wafer scale. We first modulate the precursor injection step to precisely control one cycle's adsorbed precursor amount in a range exceeding a "typical" ALD reaction. Utilizing this process, we successfully created a complete monolayer MoS2 film in one ALD cycle. The film exhibited excellent uniformity at the wafer scale, and its luminescence quantum efficiency was approximately 9 times greater than that of film formed via conventional ALD. These results indicate this method can be employed to obtain complete single layers or to develop high-quality monolayer-scale 2D materials.
- URI
- https://pubs.acs.org/doi/10.1021/acs.chemmater.1c00729https://repository.hanyang.ac.kr/handle/20.500.11754/171629
- ISSN
- 1520-5002; 0897-4756
- DOI
- 10.1021/acs.chemmater.1c00729
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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