Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2022-07-26T00:59:17Z | - |
dc.date.available | 2022-07-26T00:59:17Z | - |
dc.date.issued | 2021-06 | - |
dc.identifier.citation | CHEMISTRY OF MATERIALS, v. 33, NO 11, Page. 4099-4105 | en_US |
dc.identifier.issn | 1520-5002 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acs.chemmater.1c00729 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/171629 | - |
dc.description.abstract | Monolayer transition metal dichalcogenide corn pounds with two-dimensional (2D) layered structures may be used as next-generation active materials for electronic and optoelectronic devices. A reliable method for creating high-quality, waferscale material with well-controlled large-area growth is required for industrial applications. Two-dimensional material atomic layer deposition (ALD) can be used as an atomically flat monolayer film, but its deposition characteristics limit perfect monolayer formation. Herein, we propose a novel ALD chemical route for uniform monolayer MoS2 film deposition at the wafer scale. We first modulate the precursor injection step to precisely control one cycle's adsorbed precursor amount in a range exceeding a "typical" ALD reaction. Utilizing this process, we successfully created a complete monolayer MoS2 film in one ALD cycle. The film exhibited excellent uniformity at the wafer scale, and its luminescence quantum efficiency was approximately 9 times greater than that of film formed via conventional ALD. These results indicate this method can be employed to obtain complete single layers or to develop high-quality monolayer-scale 2D materials. | en_US |
dc.description.sponsorship | This work was supported by the Future Semiconductor Device Technology Development Program (nos. 10067739 and 20010558) funded by MOTIE (Ministry of Trade, Industry, & Energy) and KSRC (Korea Semiconductor Research Consortium). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | Materials Chemistry | en_US |
dc.subject | General Chemical Engineering | en_US |
dc.subject | General Chemistry | en_US |
dc.title | Wafer-Scale Growth of a MoS2 Monolayer via One Cycle of Atomic Layer Deposition: An Adsorbate Control Method | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 33 | - |
dc.identifier.doi | 10.1021/acs.chemmater.1c00729 | - |
dc.relation.page | 4099-4105 | - |
dc.relation.journal | CHEMISTRY OF MATERIALS | - |
dc.contributor.googleauthor | Kim, Dae Hyun | - |
dc.contributor.googleauthor | Park, Jae Chan | - |
dc.contributor.googleauthor | Park, Jeongwoo | - |
dc.contributor.googleauthor | Cho, Deok-Yong | - |
dc.contributor.googleauthor | Kim, Woo-Hee | - |
dc.contributor.googleauthor | Shong, Bonggeun | - |
dc.contributor.googleauthor | Ahn, Ji-Hoon | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.relation.code | 2021003453 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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