III-V nanowire-based ultraviolet to terahertz photodetectors: Device strategies, recent developments, and future possibilities
- Title
- III-V nanowire-based ultraviolet to terahertz photodetectors: Device strategies, recent developments, and future possibilities
- Author
- 김기현
- Keywords
- Nanowire; III-V semiconductors; Photodetectors; Broadband; Flexible PDs
- Issue Date
- 2020-09
- Publisher
- ELSEVIER SCI LTD
- Citation
- TRAC-TRENDS IN ANALYTICAL CHEMISTRY, v. 130, article no. 115989
- Abstract
- Nanowire (NW)-based photodetectors (PDs) have gained considerable attention both scientifically and technologically over the past few decades due to their potential in terms of performance, device integration, and structural utilities. III-V compound semiconductors are suitable for ultrafast photodetection over a broad spectrum range from deep ultraviolet (UV) to terahertz (THz) due to their tunable optical bandgap, high electron mobility, high aspect ratio, low defects/dislocations, and optical/electrical properties. As such, III-V NWs are perfect candidates to improve PD performance with improved antireflection, high photon trapping, and large scattering cross-sections relative to their thin-film counterparts. Despite the enormous efforts made in development of III-V semiconductors, their potential for broadband PDs has not been sufficiently detailed. Hence, we herein provide a comprehensive review of III-V NW PDs in a broad operating excitation range from UV to THz based on recent developments in device structures and their enhanced compatibility with flexible substrates along with their prospects in future research.
- URI
- https://www.sciencedirect.com/science/article/pii/S0165993620302181?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/170471
- ISSN
- 0165-9936; 1879-3142
- DOI
- 10.1016/j.trac.2020.115989
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > CIVIL AND ENVIRONMENTAL ENGINEERING(건설환경공학과) > Articles
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