III-V nanowire-based ultraviolet to terahertz photodetectors: Device strategies, recent developments, and future possibilities

Abstract

Nanowire (NW)-based photodetectors (PDs) have gained considerable attention both scientifically and technologically over the past few decades due to their potential in terms of performance, device integration, and structural utilities. III-V compound semiconductors are suitable for ultrafast photodetection over a broad spectrum range from deep ultraviolet (UV) to terahertz (THz) due to their tunable optical bandgap, high electron mobility, high aspect ratio, low defects/dislocations, and optical/electrical properties. As such, III-V NWs are perfect candidates to improve PD performance with improved antireflection, high photon trapping, and large scattering cross-sections relative to their thin-film counterparts. Despite the enormous efforts made in development of III-V semiconductors, their potential for broadband PDs has not been sufficiently detailed. Hence, we herein provide a comprehensive review of III-V NW PDs in a broad operating excitation range from UV to THz based on recent developments in device structures and their enhanced compatibility with flexible substrates along with their prospects in future research.