Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH3NH3)PbI3 and low operating power energy (similar to 47 fJ/mu m(2))
- Title
- Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH3NH3)PbI3 and low operating power energy (similar to 47 fJ/mu m(2))
- Author
- 고민재
- Keywords
- Synaptic device; Memristor; Hybrid organic–inorganic perovskite; Neuromorphic computing; Plasticity
- Issue Date
- 2020-08
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v. 833, article no. 155064
- Abstract
- Organic-inorganic hybrid perovskite (CH3NH3)PbX3 [X = I-, Cl-, and Br-] materials were evaluated with memristors for resistive switching (RS) and synaptic functionalities. Analog or multilevel memory behaviors, as well as digital RS characteristics of the Ag/ MAPbI(3)/FTO device structure, were observed in the case of CH3NH3PbI3, whereas (CH3NH3)PbCl3 and (CH3NH3)PbBr3 showed no switching characteristics. The conduction mechanism of RS was dominated by ohmic conduction, space-charge-limited conduction (SCLC), and trap-filled SCLC in both the low-resistance state and the high-resistance state. It is considered that the formation of the b-AgI phase at the interface between Ag and MAPbI(3) thin films resulted in different RS and synaptic function behaviors. We successfully emulated the fundamental synaptic characteristics with only a Ag/MAPbI(3)/FTO memristor, such as the spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, transition from short-term memory to long-term memory, and spike-timing dependent plasticity. The energy consumption of the MAPbI(3)-based memristor was estimated to be as low as 47 fJ/mm(2). Our results indicate that organiceinorganic hybrid perovskite (CH3NH3)PbI3 can be adopted in brain-inspired synaptic devices for hardware-based neuromorphic system applications. (c) 2020 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0925838820314274?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/169862
- ISSN
- 0925-8388; 1873-4669
- DOI
- 10.1016/j.jallcom.2020.155064
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > CHEMICAL ENGINEERING(화학공학과) > Articles
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