Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 고민재 | - |
dc.date.accessioned | 2022-04-11T01:29:54Z | - |
dc.date.available | 2022-04-11T01:29:54Z | - |
dc.date.issued | 2020-08 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 833, article no. 155064 | en_US |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.issn | 1873-4669 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0925838820314274?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/169862 | - |
dc.description.abstract | Organic-inorganic hybrid perovskite (CH3NH3)PbX3 [X = I-, Cl-, and Br-] materials were evaluated with memristors for resistive switching (RS) and synaptic functionalities. Analog or multilevel memory behaviors, as well as digital RS characteristics of the Ag/ MAPbI(3)/FTO device structure, were observed in the case of CH3NH3PbI3, whereas (CH3NH3)PbCl3 and (CH3NH3)PbBr3 showed no switching characteristics. The conduction mechanism of RS was dominated by ohmic conduction, space-charge-limited conduction (SCLC), and trap-filled SCLC in both the low-resistance state and the high-resistance state. It is considered that the formation of the b-AgI phase at the interface between Ag and MAPbI(3) thin films resulted in different RS and synaptic function behaviors. We successfully emulated the fundamental synaptic characteristics with only a Ag/MAPbI(3)/FTO memristor, such as the spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, transition from short-term memory to long-term memory, and spike-timing dependent plasticity. The energy consumption of the MAPbI(3)-based memristor was estimated to be as low as 47 fJ/mm(2). Our results indicate that organiceinorganic hybrid perovskite (CH3NH3)PbI3 can be adopted in brain-inspired synaptic devices for hardware-based neuromorphic system applications. (c) 2020 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by the Nano Material Technology Development Programs through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning [grant number NRF-2016M3A7B4910426]; the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education [grant number NRF-2016R1A6A1A03013422]; the Global Frontier R&D Program on Center for Multiscale Energy System Research [grant number 2012M3A6A7054856]; and the Research Program [grant number 2018R1A2B2006708] funded by the National Research Foundation under the Ministry of Science, ICT & Future Planning, Republic of Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Synaptic device | en_US |
dc.subject | Memristor | en_US |
dc.subject | Hybrid organic–inorganic perovskite | en_US |
dc.subject | Neuromorphic computing | en_US |
dc.subject | Plasticity | en_US |
dc.title | Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH3NH3)PbI3 and low operating power energy (similar to 47 fJ/mu m(2)) | en_US |
dc.type | Article | en_US |
dc.relation.volume | 833 | - |
dc.identifier.doi | 10.1016/j.jallcom.2020.155064 | - |
dc.relation.page | 1-9 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Ku, Boncheol | - |
dc.contributor.googleauthor | Koo, Bonkee | - |
dc.contributor.googleauthor | Sokolov, Andrey Sergeevich | - |
dc.contributor.googleauthor | Ko, Min Jae | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2020047954 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF CHEMICAL ENGINEERING | - |
dc.identifier.pid | mjko | - |
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