Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing
- Title
- Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing
- Author
- 안지훈
- Issue Date
- 2021-05
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v. 13, Issue. 18, Page. 8524-8530
- Abstract
- HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric phase (non-centrosymmetric orthorhombic phase) has been achieved through annealing using a post-thermal process. However, in this study, we present the first report of ferroelectricity of hafnium-zirconium-oxide (HZO) thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without additional post-thermal processing. By increasing the deposition temperature using a cyclopentadienyl-based cocktail precursor, the conditions of the as-deposited HZO thin film to crystallize well with an orthorhombic phase were secured, and excellent ferroelectric properties with a large remanent polarization (2P(r) similar to 47.6 mu C cm(-2)) were implemented without crystallization annealing. The as-deposited HZO thin film possessed very stable ferroelectric properties without a wake-up effect or significant fatigue up to 10(6) cycles. Futhermore, we demonstrated the applicability to devices using negative capacitance and non-volatile memory characteristics. This result suggests that a new strategy can be applied to ferroelectric devices where subsequent processing temperature constraints are required, such as back-end-of-line processes and ferroelectric-based flexible device applications.
- URI
- https://pubs.rsc.org/en/content/articlelanding/2021/NR/D1NR01535Dhttps://repository.hanyang.ac.kr/handle/20.500.11754/166768
- ISSN
- 2040-3364; 2040-3372
- DOI
- 10.1039/d1nr01535d
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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