Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안지훈 | - |
dc.date.accessioned | 2021-12-23T01:26:18Z | - |
dc.date.available | 2021-12-23T01:26:18Z | - |
dc.date.issued | 2021-05 | - |
dc.identifier.citation | NANOSCALE, v. 13, Issue. 18, Page. 8524-8530 | en_US |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | https://pubs.rsc.org/en/content/articlelanding/2021/NR/D1NR01535D | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/166768 | - |
dc.description.abstract | HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric phase (non-centrosymmetric orthorhombic phase) has been achieved through annealing using a post-thermal process. However, in this study, we present the first report of ferroelectricity of hafnium-zirconium-oxide (HZO) thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without additional post-thermal processing. By increasing the deposition temperature using a cyclopentadienyl-based cocktail precursor, the conditions of the as-deposited HZO thin film to crystallize well with an orthorhombic phase were secured, and excellent ferroelectric properties with a large remanent polarization (2P(r) similar to 47.6 mu C cm(-2)) were implemented without crystallization annealing. The as-deposited HZO thin film possessed very stable ferroelectric properties without a wake-up effect or significant fatigue up to 10(6) cycles. Futhermore, we demonstrated the applicability to devices using negative capacitance and non-volatile memory characteristics. This result suggests that a new strategy can be applied to ferroelectric devices where subsequent processing temperature constraints are required, such as back-end-of-line processes and ferroelectric-based flexible device applications. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.title | Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing | en_US |
dc.type | Article | en_US |
dc.relation.volume | 13 | - |
dc.identifier.doi | 10.1039/d1nr01535d | - |
dc.relation.page | 8524-8530 | - |
dc.relation.journal | NANOSCALE | - |
dc.contributor.googleauthor | Kim, Hyo-Bae | - |
dc.contributor.googleauthor | Jung, Moonyoung | - |
dc.contributor.googleauthor | Oh, Youkyoung | - |
dc.contributor.googleauthor | Lee, Seung Won | - |
dc.contributor.googleauthor | Suh, Dongseok | - |
dc.contributor.googleauthor | Ahn, Ji-Hoon | - |
dc.relation.code | 2021004171 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | ajh1820 | - |
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