Large Wavelength Response to Pressure Enabled in InGaN/GaN Microcrystal LEDs with 3D Architectures
- Title
- Large Wavelength Response to Pressure Enabled in InGaN/GaN Microcrystal LEDs with 3D Architectures
- Author
- 박원일
- Keywords
- micro-LED; InGaN/GaN microcrystal; pressure sensor; optical sensor; wavelength change
- Issue Date
- 2020-04
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS PHOTONICS, v. 7, no. 5, Page. 1122-1128
- Abstract
- Optical detection of pressure has the advantage of direct and dynamic indication of the pressure distribution with a high spatial resolution. In this study, microcrystal (mu-crystal) light-emitting diodes (LEDs) that can exhibit an unprecedented large wavelength response to pressure are demonstrated. As a key strategy, three-dimensional InGaN/GaN mu-crystals are engineered to have a hollow core and multiple facets with different multiple quantum well (MQW) structures. The unique structure allows pressure-sensitive modulation of the dominantly emitting MQWs, resulting in an anomalously large change of similar to 50 nm in the ultimate emission wavelength under an external stress of 8 MPa. The underlying mechanism is elucidated via finite-element analysis of the strain development in the mu-crystals and the corresponding piezo-potentials. The results of the study suggest a new capability for dynamic color mapping of the pressure distribution with a high spatial resolution.
- URI
- https://pubs.acs.org/doi/10.1021/acsphotonics.0c00251https://repository.hanyang.ac.kr/handle/20.500.11754/165833
- ISSN
- 2330-4022
- DOI
- 10.1021/acsphotonics.0c00251
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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