Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박원일 | - |
dc.date.accessioned | 2021-10-28T00:54:44Z | - |
dc.date.available | 2021-10-28T00:54:44Z | - |
dc.date.issued | 2020-04 | - |
dc.identifier.citation | ACS PHOTONICS, v. 7, no. 5, Page. 1122-1128 | en_US |
dc.identifier.issn | 2330-4022 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsphotonics.0c00251 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/165833 | - |
dc.description.abstract | Optical detection of pressure has the advantage of direct and dynamic indication of the pressure distribution with a high spatial resolution. In this study, microcrystal (mu-crystal) light-emitting diodes (LEDs) that can exhibit an unprecedented large wavelength response to pressure are demonstrated. As a key strategy, three-dimensional InGaN/GaN mu-crystals are engineered to have a hollow core and multiple facets with different multiple quantum well (MQW) structures. The unique structure allows pressure-sensitive modulation of the dominantly emitting MQWs, resulting in an anomalously large change of similar to 50 nm in the ultimate emission wavelength under an external stress of 8 MPa. The underlying mechanism is elucidated via finite-element analysis of the strain development in the mu-crystals and the corresponding piezo-potentials. The results of the study suggest a new capability for dynamic color mapping of the pressure distribution with a high spatial resolution. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIP) of Korea (Nos. 2018R1A2B2006410, 2016K1A4A3914691). G.-C.Y. acknowledges this work supported by the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea (No. 2015K1A1A2033332). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | micro-LED | en_US |
dc.subject | InGaN/GaN microcrystal | en_US |
dc.subject | pressure sensor | en_US |
dc.subject | optical sensor | en_US |
dc.subject | wavelength change | en_US |
dc.title | Large Wavelength Response to Pressure Enabled in InGaN/GaN Microcrystal LEDs with 3D Architectures | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1021/acsphotonics.0c00251 | - |
dc.relation.page | 1122-1128 | - |
dc.relation.journal | ACS PHOTONICS | - |
dc.contributor.googleauthor | Yang, Dong Won | - |
dc.contributor.googleauthor | Lee, Keundong | - |
dc.contributor.googleauthor | Jang, Suhee | - |
dc.contributor.googleauthor | Chang, Won Jun | - |
dc.contributor.googleauthor | Kim, Su Han | - |
dc.contributor.googleauthor | Lee, Jae Hyung | - |
dc.contributor.googleauthor | Yi, Gyu-Chul | - |
dc.contributor.googleauthor | Park, Won Il | - |
dc.relation.code | 2020051329 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | wipark | - |
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