Electronics Letters, v. 37, issue. 13, page. 831-832
Abstract
A 1.5 μm wavelength distributed reflector laser, consisting of a distributed Bragg reflector rear facet and a distributed feedback region, was realised using deep-etching technology. A low threshold current of I^sub th^ = 12.4 mA and a high differential quantum efficiency of η^sub d^ = 42% from the front facet was achieved with a submode suppression ratio of 33 dB (I = 2.4I^sub th^) for a fifth-order grating, 220 μm long and 6 μm wide device at room temperature.