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dc.contributor.author심종인-
dc.date.accessioned2021-03-09T06:35:10Z-
dc.date.available2021-03-09T06:35:10Z-
dc.date.issued2001-07-
dc.identifier.citationElectronics Letters, v. 37, issue. 13, page. 831-832en_US
dc.identifier.issn0013-5194-
dc.identifier.urihttps://www.proquest.com/docview/1622055899/DBA4A8043B64430BPQ/1?accountid=11283-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/160391-
dc.description.abstractA 1.5 μm wavelength distributed reflector laser, consisting of a distributed Bragg reflector rear facet and a distributed feedback region, was realised using deep-etching technology. A low threshold current of I^sub th^ = 12.4 mA and a high differential quantum efficiency of η^sub d^ = 42% from the front facet was achieved with a submode suppression ratio of 33 dB (I = 2.4I^sub th^) for a fifth-order grating, 220 μm long and 6 μm wide device at room temperature.en_US
dc.language.isoen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.title1.5㎛ Wavelength Distributed Reflector Lasers with Vertical Gratingen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20010589-
dc.relation.journalIEEE ELECTRON DEVICE LETTERS-
dc.contributor.googleauthorWiedmann, J.-
dc.contributor.googleauthorEbihara, K.-
dc.contributor.googleauthorKim, H.C.-
dc.contributor.googleauthorChen, B.-
dc.contributor.googleauthorOhta, M.-
dc.contributor.googleauthorMatsui, K.-
dc.contributor.googleauthorTamura, S.-
dc.contributor.googleauthorShim, J.-I.-
dc.contributor.googleauthorArai, S.-
dc.relation.code2009203822-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjishim-


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