Highly‐Ordered Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Atomic Layer Deposition Process
- Title
- Highly‐Ordered Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Atomic Layer Deposition Process
- Author
- 정재경
- Keywords
- Atomic Layer Deposition (ALD); Indium-Gallium-Zinc-Oxide (IGZO); Crystalline Oxide Thin Film; Seed Layer; Oxide Thin Film Transistor
- Issue Date
- 2019-05
- Publisher
- Wiley
- Citation
- SID Symposium Digest of Technical Papers, v. 50, no. 1, page. 1237-1240
- Abstract
- We reported the fabrication of amorphous or crystalline IGZO thin film transistors using atomic layer deposition (ALD) method. To observe the crystallinity effect of thin films which are used as a semiconductor channels for TFTs, we tried to deposit crystalline‐IGZO thin films with improving preferred orientation. In this paper, we formed IGZO thin film showing highly‐oriented crystalline properties by insertion seed layer underneath a IGZO thin films. As a result, we could figure out the interrelationship between semiconductor channel crystallinity and electrical performance of devices.
- URI
- https://onlinelibrary.wiley.com/doi/abs/10.1002/sdtp.13156https://repository.hanyang.ac.kr/handle/20.500.11754/160292
- ISSN
- 0097-966X
- DOI
- 10.1002/sdtp.13156
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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