IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586), page. 151-152
Abstract
A novel process to develop field emitter arrays (FEAs) with sub-micron gate holes for highfrequency (GHz) operation of FEA-based microtriode amplifiers is proposed. The formation of
amorphous silicon(a-Si) sidewall may be the key technology used to obtain the emitter structure.
Scanning electron microscope (SEM) images, field-emission properties, transconductances, and
capacitances of the emitters fabricated are presented. Theoretical considerations on the proposed
structure are also discussed.