기판의 결정방향 및 증착변수가 다이아몬드 박막의 배향성에 미치는 영향

Abstract

Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (lll)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleatlon(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.