Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진석 | - |
dc.date.accessioned | 2021-01-27T01:42:55Z | - |
dc.date.available | 2021-01-27T01:42:55Z | - |
dc.date.issued | 2002-07 | - |
dc.identifier.citation | 2002 대한전기학회 하계학술대회 논문집 C, page. 1542-1545 | en_US |
dc.identifier.uri | http://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01327893? | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/157559 | - |
dc.description.abstract | Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (lll)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleatlon(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process. | en_US |
dc.language.iso | ko_KR | en_US |
dc.publisher | 대한전기학회 | en_US |
dc.title | 기판의 결정방향 및 증착변수가 다이아몬드 박막의 배향성에 미치는 영향 | en_US |
dc.title.alternative | The influence of crystalline direction of substrate and depostion conditions on the orientation of diamond films | en_US |
dc.type | Article | en_US |
dc.contributor.googleauthor | 이태훈 | - |
dc.contributor.googleauthor | 서수형 | - |
dc.contributor.googleauthor | 박진석 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | jinsp | - |
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