Sensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical Dimension
- Title
- Sensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical Dimension
- Author
- 오혜근
- Keywords
- lithography; critical dimension; optimization; simulation parameters; response surface methodology
- Issue Date
- 2002-06
- Publisher
- IOP PUBLISHING LTD
- Citation
- Japanese Journal of Applied Physics, v. 41, no. 6S, page. 4222-4227
- Abstract
- In this study, lithography processes were modeled and simulated for the optimized parameters of 365 nm, 248 nm, and 193 nm resists. Also, sensitivity of those parameters for the critical dimension (CD) and side wall angle of simulated Profile,, Was analyzed using the response surface methodology (RSM). Through the quantization of sensitivity of these easy-to-optimize simulation parameters, we quantified lithography processes and discussed the different phenomenon of the chemically amplified resist (CAR) compared to the non-CAR. To validate our results, the quantitative comparison between our results and those of a commercial tool was shown.
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.41.4222/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/157037
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.1143/JJAP.41.4222
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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