알루미늄 박막의 화학기계적연마 가공에 관한 연구
- Title
- 알루미늄 박막의 화학기계적연마 가공에 관한 연구
- Other Titles
- Chemical Mechanical Polishing of Aluminum Thin Films
- Author
- 안유민
- Keywords
- Chemical mechanical polishing; Al thin films; Planarity/Waviness; Surface roughness; Removal rate; 화학기계적연마; 알루미늄 박막; 평탄도; 표면거칠기; 소재제거율
- Issue Date
- 2002-02
- Publisher
- 한국정밀공학회
- Citation
- 한국정밀공학회지, v. 19, no. 2, page. 49-57
- Abstract
- The effect of mechanical parameters on chemical mechanical polishing (CMP) of blanket and patterned aluminum thin films are investigated. CMP process experiments are conducted using the soft pad and the slurry mainly composed of acid solution and Al2O3 abrasive. The result for the blanket film showed that as the concentration of abrasive in slurry is increased, the surface roughness gets worse but the waviness gets better. The planarity of the patterned Al films is slowly improved by CMP when the width of and gap between the patterns are relatively small. It is tried to find the optimized CMP process conditions by that the patterned Al thin film can be planarized with fine surface. The most satisfiable film surface is obtained when the applied pressure is low (10kPa) and the abrasive concentration is relatively high (5wt.%).
- URI
- http://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE00851622https://repository.hanyang.ac.kr/handle/20.500.11754/156850
- ISSN
- 1225-9071; 2287-8769
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MECHANICAL ENGINEERING(기계공학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML