AIN thin films are prepared on Si(111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain AIN thin films with high c-axis (002)-TC value and low surface roughnesses. For all the deposited AIN films, the c-axis (002)-orientation, surface mophology, and roughness are characterized in terms of deposition conditions. FBAR devices with AI/AIN/Mo/Si(111) configuration are also fabricated. From the frequency response characteristics. the return loss and electromechanical coupling contant(kt2) are estimated.