Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진석 | - |
dc.date.accessioned | 2020-11-27T07:49:47Z | - |
dc.date.available | 2020-11-27T07:49:47Z | - |
dc.date.issued | 2003-07 | - |
dc.identifier.citation | 대한전기학회 학술대회 논문집, v. 2003, no. 7, page. 1577-1579 | en_US |
dc.identifier.uri | http://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01338755 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/156037 | - |
dc.description.abstract | AIN thin films are prepared on Si(111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain AIN thin films with high c-axis (002)-TC value and low surface roughnesses. For all the deposited AIN films, the c-axis (002)-orientation, surface mophology, and roughness are characterized in terms of deposition conditions. FBAR devices with AI/AIN/Mo/Si(111) configuration are also fabricated. From the frequency response characteristics. the return loss and electromechanical coupling contant(kt2) are estimated. | en_US |
dc.language.iso | ko_KR | en_US |
dc.publisher | 대한전기학회 | en_US |
dc.title | 2단계 증착 방법이 AlN 박막의 물성 및 체적 탄성파 소자의 특성에 미치는 영향 | en_US |
dc.title.alternative | Effects of two-step deposition on the property of AIN films and the device characteristic of AIN-based FBARs | en_US |
dc.type | Article | en_US |
dc.contributor.googleauthor | 조동현 | - |
dc.contributor.googleauthor | 정준필 | - |
dc.contributor.googleauthor | 이진복 | - |
dc.contributor.googleauthor | 박진석 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | jinsp | - |
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