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dc.contributor.author박진석-
dc.date.accessioned2020-11-27T07:49:47Z-
dc.date.available2020-11-27T07:49:47Z-
dc.date.issued2003-07-
dc.identifier.citation대한전기학회 학술대회 논문집, v. 2003, no. 7, page. 1577-1579en_US
dc.identifier.urihttp://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01338755-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/156037-
dc.description.abstractAIN thin films are prepared on Si(111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain AIN thin films with high c-axis (002)-TC value and low surface roughnesses. For all the deposited AIN films, the c-axis (002)-orientation, surface mophology, and roughness are characterized in terms of deposition conditions. FBAR devices with AI/AIN/Mo/Si(111) configuration are also fabricated. From the frequency response characteristics. the return loss and electromechanical coupling contant(kt2) are estimated.en_US
dc.language.isoko_KRen_US
dc.publisher대한전기학회en_US
dc.title2단계 증착 방법이 AlN 박막의 물성 및 체적 탄성파 소자의 특성에 미치는 영향en_US
dc.title.alternativeEffects of two-step deposition on the property of AIN films and the device characteristic of AIN-based FBARsen_US
dc.typeArticleen_US
dc.contributor.googleauthor조동현-
dc.contributor.googleauthor정준필-
dc.contributor.googleauthor이진복-
dc.contributor.googleauthor박진석-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidjinsp-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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