증착변수 및 첨가가스에 따른 다이아몬드 박막의 구조적 물성 및 전계 방출 특성의 변화 분석

Abstract

Diamond films including nanocystalline and graphite phase are grown by microwave plasma chemical vapor deposition using N2 additives and negative substrate bias at growth step. The microstructure of the films is controlled by changing N: gas ratio and negative bias. Defects and grain boundaries between diamond and graphite are proposed to be crucial factors for forming the conducting path of electron emissions. The effect of growth parameters on the film microstructure are investigated by Raman spectroscopy and scanning electron microscopy(SEM). Electron emission characteristics are also examined in terms of the film growth conditions.