Laser Shock Removal of Micro and Nanoscale Particles
- Title
- Laser Shock Removal of Micro and Nanoscale Particles
- Author
- 박진구
- Keywords
- Dry cleaning; submicron panicle removal; laser shock cleaning; post CMF' cleaning; plasma shock wave; adhesion force
- Issue Date
- 2003-02
- Publisher
- IEEE
- Citation
- Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI, Page.41-45
- Abstract
- A new dry cleaning technology: laser-induced shock cleaning has been applied to remove the submicron particles (including post-CMP (chemical-mechanical polishing)) slurries from silicon wafer surfaces. The cleaning effectiveness of the new technology was evaluated quantitatively using a laser surface scanner. The results show that most of the silica particles on the wafer surface were removed after exposure to the laser-induced shock waves. The average removal efficiency of the particles was over 99%. The results show that cleaning efficiency is strongly dependent on a gap distance between laser focus point and the wafer surface and that a suitable control of the gap is crucial for the successful removal of the particles. In addition, this new technique was also applied successfully to the removal of the post-CMP slurries from polished patterned wafers.
- URI
- https://ieeexplore.ieee.org/document/1194464?arnumber=1194464&SID=EBSCO:edseeehttps://repository.hanyang.ac.kr/handle/20.500.11754/154922
- ISSN
- 1078-8743
- DOI
- 10.1109/ASMC.2003.1194464
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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