Charge retention loss and its mechanism of (Bi,La)4Ti3O12 capacitors
- Title
- Charge retention loss and its mechanism of (Bi,La)4Ti3O12 capacitors
- Author
- 강보수
- Keywords
- ferroelectric; BLT; retention; imprint; polarization relaxation
- Issue Date
- 2004-11
- Publisher
- TAYLOR & FRANCIS LTD
- Citation
- INTEGRATED FERROELECTRICS, v.67, Issue.1, Page.85-91
- Abstract
- We investigated the retention properties of BLT capacitors fabricated by a chemical solution deposition with Pt electrodes. BLT capacitors showed an opposite-state retention loss much better than that of PZT capacitor. On the other hand, BLT capacitors showed a large polarization loss of the same-state retention within I hour baking, while the corresponding loss of PZT was negligible. The hysteresis loops after different baking time showed a negligible imprint and a large relaxation of polarization. These behaviors were explained by a high resistance against imprint and a polarization relaxation possibly due to damaged interfacial layers developed by etching process of the BLT capacitors.
- URI
- https://www.tandfonline.com/doi/full/10.1080/10584580490898542https://repository.hanyang.ac.kr/handle/20.500.11754/154888
- DOI
- 10.1080/10584580490898542
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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