A study of process parameter control for nanopattern
- Title
- A study of process parameter control for nanopattern
- Author
- 오혜근
- Keywords
- Lithography; Lithography simulation; Chemically amplified resist; Mask error enhancement factor; Optical proximity correction
- Issue Date
- 2004-11
- Publisher
- KOREAN PHYSICAL SOC(한국물리학회)
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, No.3, Page.763-739
- Abstract
- As lithography technology pushes to the nanoline dimensions, even less drastic changes during photoresist processes can have a non-negligible impact on proximity behavior thus, these changes can affect the optical proximity correction rules and models. In this study, after the descriptions of the whole-process parameters, the impact on proximity behavior is described and analyzed by using the quantitative sensitivity of these parameters on the critical dimension. Our lithography simulator shows similar behavior to a commercial tool in the critical dimension variation of each tool due to process parameters. By using this benchmark home-made lithography simulator and response surface methodology, the most dominant response parameters of each process in terms of critical dimension and side-wall angle are found to be numerical aperture of the projection lens system and time for the soft-bake process. The most effective process for the 193-nm chemically amplified resist is found to be the post-expose bake process for critical dimension and side-wall angle. Although the prediction errors are less than 10% of the pattern size by using the threshold-energy resist model, the effect on optical proximity correction rules and the characterization of the mask error enhancement factor can be easily controlled to below 5% of pattern size by using these dominant process parameters.
- URI
- https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART000962867https://repository.hanyang.ac.kr/handle/20.500.11754/154815
- ISSN
- 0374-4884
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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