286 0

Industrial 650V 4-Pack Super-Junction MOSFET Module using Transfer Molding Process

Title
Industrial 650V 4-Pack Super-Junction MOSFET Module using Transfer Molding Process
Author
윤상원
Keywords
4-Pack Power Module; Super-Junction MOSFET; Transfer Molding; Package on-resistance; Stray Inductance; Junction to Case Thermal Resistance
Issue Date
2019-10
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
2019 IEEE Energy Conversion Congress and Exposition (ECCE), Page. 4097-4101
Abstract
This paper reports a new design of a 4-pack super-junction MOSFET power module using a transfer molding process. This module initially targets industrial applications, such as photovoltaic (PV) inverters or energy storage system (ESS). Many conventional 650V power modules are gel-filled IGBT modules, but our transfer molded super-junction MOSFET power module can satisfy electrical insulation and thermal conductivity with potential reduction in production cost and module volume. Super-junction MOSFET dies are soldered on a direct bonded copper (DBC) substrate in the power module. Fabrication process is also customized to the molded super-junction MOSFET module. The designed power modules are successfully fabricated, demonstrating a volume reduction. The fabricated modules are evaluated by FEM simulations and experiments, which exhibit excellent thermal and electrical performances. A small thermal resistance (~0.26 K/W) and package on-resistance (~15.7mΩ) are achieved.
URI
https://ieeexplore.ieee.org/document/8912910https://repository.hanyang.ac.kr/handle/20.500.11754/154688
ISBN
978-1-7281-0395-2
ISSN
2329-3748
DOI
10.1109/ECCE.2019.8912910
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > AUTOMOTIVE ENGINEERING(미래자동차공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE