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Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks

Title
Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks
Author
최창환
Keywords
TFET; PBTI; FD-SOI; Local Trap; Reliability
Issue Date
2019-10
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 19, no. 10, Page. 6131-6134
Abstract
The positive bias temperature instability (PBTI) characteristics of fully depleted silicon on insulator (FD-SOI) tunneling field effect transistor (TFET) are investigated in comparison with those of metal oxide semiconductor field effect transistor (MOSFET) fabricated with the same technology process. Unlike some of the previously reported studies, in which the PBTI lifetime of TFET is much longer than that of MOSFET, in this study, the PBTI lifetime of TFET is found to be shorter than that of MOSFET. This result is very interesting, because degradation of electrical parameters of TFET is mainly affected by local traps near the source junction rather than global traps in the channel region. Large degradation of the electrical parameters of TFET due to PBTI stress would result from large fluctuation of the vertical electric field caused by traps near the source junction. This electric field fluctuation near the local region in TFET has more impact on electrical parameter degradation than channel conductivity fluctuation in MOSFET. Therefore, to improve the reliability characteristics of TFET, evaluation of PBTI characteristics and improvement of the quality of gate oxide near the source junction are essential.
URI
https://www.ingentaconnect.com/content/asp/jnn/2019/00000019/00000010/art00024https://repository.hanyang.ac.kr/handle/20.500.11754/154489
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2019.16992
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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