Electrical transport characteristics of chemically robust PDPP-DTT embedded in a bridged silsesquioxane network
- Title
- Electrical transport characteristics of chemically robust PDPP-DTT embedded in a bridged silsesquioxane network
- Author
- 김도환
- Keywords
- FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; POLYMER SEMICONDUCTORS; MOBILITY
- Issue Date
- 2019-12
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v. 7, no. 47, Page. 14889-14896
- Abstract
- Chemical robustness of solution-processed polymer semiconductor films against various chemical solvents plays a critical role in realizing the low-cost fabrication of functional devices in tandem structures. This has been recently obtained by constructing a semi-interpenetrating diphasic polymer network (s-IDPN) comprising a bridged silsesquioxane (BSSQ) framework with an embedded polymer semiconductor. Despite the disruption in the ordering of polymers induced by the BSSQ framework, the electrical transport characteristics of the s-IDPN film turned out to be superior to those of the pristine polymer film. As a case study, we examined the temperature-dependent electrical transport characteristics of poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno[3,2-b]thiophene)] (PDPP-DTT) embedded in a bridged silsesquioxane (BSSQ) framework. The enhanced transport through PDPP-DTT in the s-IDPN structure is associated with the increased short-range ordering of the polymers embedded in the BSSQ framework and the chemical doping effect provided by the framework, which altogether concentrate the density of states for PDPP-DTT effectively involved in hole transport.
- URI
- https://pubs.rsc.org/en/content/articlelanding/2019/TC/C9TC04940A#!divAbstracthttps://repository.hanyang.ac.kr/handle/20.500.11754/154339
- ISSN
- 2050-7526; 2050-7534
- DOI
- 10.1039/c9tc04940a
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > CHEMICAL ENGINEERING(화학공학과) > Articles
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