Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김도환 | - |
dc.date.accessioned | 2020-09-29T05:19:38Z | - |
dc.date.available | 2020-09-29T05:19:38Z | - |
dc.date.issued | 2019-12 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 7, no. 47, Page. 14889-14896 | en_US |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | https://pubs.rsc.org/en/content/articlelanding/2019/TC/C9TC04940A#!divAbstract | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/154339 | - |
dc.description.abstract | Chemical robustness of solution-processed polymer semiconductor films against various chemical solvents plays a critical role in realizing the low-cost fabrication of functional devices in tandem structures. This has been recently obtained by constructing a semi-interpenetrating diphasic polymer network (s-IDPN) comprising a bridged silsesquioxane (BSSQ) framework with an embedded polymer semiconductor. Despite the disruption in the ordering of polymers induced by the BSSQ framework, the electrical transport characteristics of the s-IDPN film turned out to be superior to those of the pristine polymer film. As a case study, we examined the temperature-dependent electrical transport characteristics of poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno[3,2-b]thiophene)] (PDPP-DTT) embedded in a bridged silsesquioxane (BSSQ) framework. The enhanced transport through PDPP-DTT in the s-IDPN structure is associated with the increased short-range ordering of the polymers embedded in the BSSQ framework and the chemical doping effect provided by the framework, which altogether concentrate the density of states for PDPP-DTT effectively involved in hole transport. | en_US |
dc.description.sponsorship | This work was supported by the Human Resources Program in Energy Technology (No. 20174010201150) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Trade, Industry & Energy, Korea. This work was also supported by the Basic Science Research Program (2017R1A2B4012819) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT. The authors thank Prof. B. Kang and Prof. K. Cho for the 2D-GIXD measurement. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | FIELD-EFFECT TRANSISTORS | en_US |
dc.subject | CHARGE-TRANSPORT | en_US |
dc.subject | POLYMER SEMICONDUCTORS | en_US |
dc.subject | MOBILITY | en_US |
dc.title | Electrical transport characteristics of chemically robust PDPP-DTT embedded in a bridged silsesquioxane network | en_US |
dc.type | Article | en_US |
dc.relation.no | 47 | - |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1039/c9tc04940a | - |
dc.relation.page | 14889-14896 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Shin, Jihye | - |
dc.contributor.googleauthor | Park, Han Wool | - |
dc.contributor.googleauthor | Kim, Seunghan | - |
dc.contributor.googleauthor | Yang, Jeehye | - |
dc.contributor.googleauthor | Kim, Jaehee | - |
dc.contributor.googleauthor | Park, Hye Won | - |
dc.contributor.googleauthor | Kim, Do Hwan | - |
dc.contributor.googleauthor | Kang, Moon Sung | - |
dc.relation.code | 2019000823 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF CHEMICAL ENGINEERING | - |
dc.identifier.pid | dhkim76 | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3003-8125 | - |
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