Fabrication; Indium gallium arsenide; Indium phosphide; Avalanche photodiodes; Bandwidth; Absorption; Optical noise; Ionization; Laboratories; Dark current
Issue Date
2004-05
Publisher
IEEE
Citation
2004 International Conference on Indium Phosphide and Related Materials, Page. 215-218
Abstract
A 10 Gb/s APD is designed and fabricated by using the non-local model. Multiplication layer thickness and 2-dimensional Zn-diffusion profiles are optimized. The gain and bandwidth product (GB) more than 80 GHz, spatially uniform gain distribution, and the dark current less than 1 nA are successfully obtained.