Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Design and Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode(APD) based on the Non-local Model
- Title
- Design and Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode(APD) based on the Non-local Model
- Author
- 심종인
- Keywords
- Fabrication; Indium gallium arsenide; Indium phosphide; Avalanche photodiodes; Bandwidth; Absorption; Optical noise; Ionization; Laboratories; Dark current
- Issue Date
- 2004-05
- Publisher
- IEEE
- Citation
- 2004 International Conference on Indium Phosphide and Related Materials, Page. 215-218
- Abstract
- A 10 Gb/s APD is designed and fabricated by using the non-local model. Multiplication layer thickness and 2-dimensional Zn-diffusion profiles are optimized. The gain and bandwidth product (GB) more than 80 GHz, spatially uniform gain distribution, and the dark current less than 1 nA are successfully obtained.
- URI
- https://ieeexplore.ieee.org/document/1442650https://repository.hanyang.ac.kr/handle/20.500.11754/139382
- ISBN
- 0-7803-8595-0
- ISSN
- 1092-8669
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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