Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심종인 | - |
dc.date.accessioned | 2020-03-24T01:04:04Z | - |
dc.date.available | 2020-03-24T01:04:04Z | - |
dc.date.issued | 2004-05 | - |
dc.identifier.citation | 2004 International Conference on Indium Phosphide and Related Materials, Page. 215-218 | en_US |
dc.identifier.isbn | 0-7803-8595-0 | - |
dc.identifier.issn | 1092-8669 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/1442650 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/139382 | - |
dc.description.abstract | A 10 Gb/s APD is designed and fabricated by using the non-local model. Multiplication layer thickness and 2-dimensional Zn-diffusion profiles are optimized. The gain and bandwidth product (GB) more than 80 GHz, spatially uniform gain distribution, and the dark current less than 1 nA are successfully obtained. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE | en_US |
dc.subject | Fabrication | en_US |
dc.subject | Indium gallium arsenide | en_US |
dc.subject | Indium phosphide | en_US |
dc.subject | Avalanche photodiodes | en_US |
dc.subject | Bandwidth | en_US |
dc.subject | Absorption | en_US |
dc.subject | Optical noise | en_US |
dc.subject | Ionization | en_US |
dc.subject | Laboratories | en_US |
dc.subject | Dark current | en_US |
dc.title | Design and Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode(APD) based on the Non-local Model | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/ICIPRM.2004.1442650 | - |
dc.contributor.googleauthor | Hwang, Sungmin | - |
dc.contributor.googleauthor | Shim, Jongin | - |
dc.contributor.googleauthor | Eo, Yungseon | - |
dc.contributor.googleauthor | Yang, Seungkee | - |
dc.contributor.googleauthor | Kang, Hwayong | - |
dc.contributor.googleauthor | Jun, Byoungok | - |
dc.contributor.googleauthor | Lee, Doyong | - |
dc.contributor.googleauthor | Jang, Donghoon | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF PHOTONICS AND NANOELECTRONICS | - |
dc.identifier.pid | jishim | - |
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