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dc.contributor.author심종인-
dc.date.accessioned2020-03-24T01:04:04Z-
dc.date.available2020-03-24T01:04:04Z-
dc.date.issued2004-05-
dc.identifier.citation2004 International Conference on Indium Phosphide and Related Materials, Page. 215-218en_US
dc.identifier.isbn0-7803-8595-0-
dc.identifier.issn1092-8669-
dc.identifier.urihttps://ieeexplore.ieee.org/document/1442650-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/139382-
dc.description.abstractA 10 Gb/s APD is designed and fabricated by using the non-local model. Multiplication layer thickness and 2-dimensional Zn-diffusion profiles are optimized. The gain and bandwidth product (GB) more than 80 GHz, spatially uniform gain distribution, and the dark current less than 1 nA are successfully obtained.en_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.subjectFabricationen_US
dc.subjectIndium gallium arsenideen_US
dc.subjectIndium phosphideen_US
dc.subjectAvalanche photodiodesen_US
dc.subjectBandwidthen_US
dc.subjectAbsorptionen_US
dc.subjectOptical noiseen_US
dc.subjectIonizationen_US
dc.subjectLaboratoriesen_US
dc.subjectDark currenten_US
dc.titleDesign and Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode(APD) based on the Non-local Modelen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/ICIPRM.2004.1442650-
dc.contributor.googleauthorHwang, Sungmin-
dc.contributor.googleauthorShim, Jongin-
dc.contributor.googleauthorEo, Yungseon-
dc.contributor.googleauthorYang, Seungkee-
dc.contributor.googleauthorKang, Hwayong-
dc.contributor.googleauthorJun, Byoungok-
dc.contributor.googleauthorLee, Doyong-
dc.contributor.googleauthorJang, Donghoon-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjishim-


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