Measurement of the piezoelectric field in InGaN/AlGaN multiple-quantum-well near-ultraviolet light-emitting diodes by electroreflectance spectroscopy
- Title
- Measurement of the piezoelectric field in InGaN/AlGaN multiple-quantum-well near-ultraviolet light-emitting diodes by electroreflectance spectroscopy
- Author
- 신동수
- Keywords
- Light-emitting diodes; electroreflectance; photocurrent; defects; flat-band voltage; piezoelectric field
- Issue Date
- 2019-10
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE JOURNAL OF QUANTUM ELECTRONICS, v. 55, No. 5, Article no. 3200307
- Abstract
- The piezoelectric field in InGaN/AlGaN-based multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes (LEDs) was measured by electroreflectance and photocurrent spectroscopies. At forward and reverse biases, both electroreflectance and photocurrent spectra were studied by utilizing similar-structure samples with indium contents of similar to 4.5%, similar to 5.5%, similar to 6.5%, and similar to 7.5%. The influence of MQW and superlattice structures on the electroreflectance spectra was interactively identified. The relation between the defects and the diffusion of Mg acceptors through the defects into the MQWs was also observed and systematically confirmed through the capacitance-voltage characteristics. The effects of diffused Mg acceptors on electroreflectance spectra, depletion width, and the piezoelectric field were found. The strain relaxation caused by the defects was also systematically investigated. The calculated piezoelectric fields of these samples were in good agreement with the theoretically calculated values.
- URI
- https://ieeexplore.ieee.org/document/8760566https://repository.hanyang.ac.kr/handle/20.500.11754/121277
- ISSN
- 0018-9197; 1558-1713
- DOI
- 10.1109/JQE.2019.2928370
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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