Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2019-12-12T06:15:21Z | - |
dc.date.available | 2019-12-12T06:15:21Z | - |
dc.date.issued | 2019-10 | - |
dc.identifier.citation | IEEE JOURNAL OF QUANTUM ELECTRONICS, v. 55, No. 5, Article no. 3200307 | en_US |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.issn | 1558-1713 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8760566 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/121277 | - |
dc.description.abstract | The piezoelectric field in InGaN/AlGaN-based multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes (LEDs) was measured by electroreflectance and photocurrent spectroscopies. At forward and reverse biases, both electroreflectance and photocurrent spectra were studied by utilizing similar-structure samples with indium contents of similar to 4.5%, similar to 5.5%, similar to 6.5%, and similar to 7.5%. The influence of MQW and superlattice structures on the electroreflectance spectra was interactively identified. The relation between the defects and the diffusion of Mg acceptors through the defects into the MQWs was also observed and systematically confirmed through the capacitance-voltage characteristics. The effects of diffused Mg acceptors on electroreflectance spectra, depletion width, and the piezoelectric field were found. The strain relaxation caused by the defects was also systematically investigated. The calculated piezoelectric fields of these samples were in good agreement with the theoretically calculated values. | en_US |
dc.description.sponsorship | This work was supported by the Technology Innovation Program through the Ministry of Trade, Industry, and Energy, South Korea, under Grant 10065712. (Corresponding author: Dong-Soo Shin.) | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Light-emitting diodes | en_US |
dc.subject | electroreflectance | en_US |
dc.subject | photocurrent | en_US |
dc.subject | defects | en_US |
dc.subject | flat-band voltage | en_US |
dc.subject | piezoelectric field | en_US |
dc.title | Measurement of the piezoelectric field in InGaN/AlGaN multiple-quantum-well near-ultraviolet light-emitting diodes by electroreflectance spectroscopy | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 55 | - |
dc.identifier.doi | 10.1109/JQE.2019.2928370 | - |
dc.relation.page | 1-7 | - |
dc.relation.journal | IEEE JOURNAL OF QUANTUM ELECTRONICS | - |
dc.contributor.googleauthor | Islam, A.B.M.H. | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.relation.code | 2019000569 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF PHOTONICS AND NANOELECTRONICS | - |
dc.identifier.pid | dshin | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.