Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
- Title
- Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
- Author
- 송윤흡
- Keywords
- GE2SB2TE5 FILMS; DATA-STORAGE
- Issue Date
- 2018-04
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v. 112, no. 18, Article no. 183504
- Abstract
- Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between the two states. Thus, great efforts have been devoted to identifying potential phase-change materials (PCMs) with large electrical contrast to realize a more accurate reading operation. In contrast, although the truly dominant resistance in a scaled PCRAM cell is contact resistance, less attention has been paid toward the investigation of the contact property between PCMs and electrode metals. This study aims to propose a non-bulk-resistance-dominant PCRAM whose resistance is modulated only by contact. The contact-resistance-dominated PCM exploited here is N-doped Cr2Ge2Te6 (NCrGT), which exhibits almost no electrical resistivity difference between the two phases but exhibits a typical switching behavior involving a three-order-of-magnitude SET/RESET resistance ratio owing to its large contact resistance contrast. The conduction mechanism was discussed on the basis of current-voltage characteristics of the interface between the NCrGT and the W electrode. Published by AIP Publishing.
- URI
- https://aip.scitation.org/doi/10.1063/1.5029327https://repository.hanyang.ac.kr/handle/20.500.11754/118161
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.5029327
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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