Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2019-12-07T16:37:40Z | - |
dc.date.available | 2019-12-07T16:37:40Z | - |
dc.date.issued | 2018-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 112, no. 18, Article no. 183504 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.5029327 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/118161 | - |
dc.description.abstract | Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between the two states. Thus, great efforts have been devoted to identifying potential phase-change materials (PCMs) with large electrical contrast to realize a more accurate reading operation. In contrast, although the truly dominant resistance in a scaled PCRAM cell is contact resistance, less attention has been paid toward the investigation of the contact property between PCMs and electrode metals. This study aims to propose a non-bulk-resistance-dominant PCRAM whose resistance is modulated only by contact. The contact-resistance-dominated PCM exploited here is N-doped Cr2Ge2Te6 (NCrGT), which exhibits almost no electrical resistivity difference between the two phases but exhibits a typical switching behavior involving a three-order-of-magnitude SET/RESET resistance ratio owing to its large contact resistance contrast. The conduction mechanism was discussed on the basis of current-voltage characteristics of the interface between the NCrGT and the W electrode. Published by AIP Publishing. | en_US |
dc.description.sponsorship | This work was supported by KAKENHI (Grant No. 15H04113) and JSPS and KPFK under the Japan-Korea Basic Scientific Cooperation Program. This work was also supported by the Kato Foundation for Promotion of Science. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | GE2SB2TE5 FILMS | en_US |
dc.subject | DATA-STORAGE | en_US |
dc.title | Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change | en_US |
dc.type | Article | en_US |
dc.relation.no | 18 | - |
dc.relation.volume | 112 | - |
dc.identifier.doi | 10.1063/1.5029327 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Shuang, Y. | - |
dc.contributor.googleauthor | Sutou, Y. | - |
dc.contributor.googleauthor | Hatayama, S. | - |
dc.contributor.googleauthor | Shindo, S. | - |
dc.contributor.googleauthor | Song, Y. H. | - |
dc.contributor.googleauthor | Ando, D. | - |
dc.contributor.googleauthor | Koike, J. | - |
dc.relation.code | 2018003212 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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