Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs
- Title
- Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs
- Author
- 김태환
- Keywords
- FinFETs; Fin Top Edge; Effective Channel; On-Current Level; Electron Mobility
- Issue Date
- 2018-03
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 18, no. 3, page. 1837-1840
- Abstract
- The effect of the curved fin top edge on the electrical characteristics of FinFETs was investigated. The curvature radius of the fin top edge for the FinFETs was changed from 0 to 5 nm in order to determine the optimum condition of the electrical characteristics for the devices. The on-current level of the FinFETs with a curvature radius of 5 nm of fin top edge was 24.45% larger than that of the FinFETs with a cuboid fin. The electron current density and the electron mobility of the fin top edge for the FinFETs were larger than those for the FinFETs with a cuboid fin. The electrical characteristics of the FinFETs with a curvature radius of 5 nm for the fin top edge showed the best performance due to the largest expansion of the effective channel region.
- URI
- https://www.ingentaconnect.com/content/asp/jnn/2018/00000018/00000003/art00044https://repository.hanyang.ac.kr/handle/20.500.11754/118044
- ISSN
- 1533-4880; 1533-4899
- DOI
- 10.1166/jnn.2018.14986
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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