Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2019-12-07T11:27:02Z | - |
dc.date.available | 2019-12-07T11:27:02Z | - |
dc.date.issued | 2018-03 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 18, no. 3, page. 1837-1840 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://www.ingentaconnect.com/content/asp/jnn/2018/00000018/00000003/art00044 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/118044 | - |
dc.description.abstract | The effect of the curved fin top edge on the electrical characteristics of FinFETs was investigated. The curvature radius of the fin top edge for the FinFETs was changed from 0 to 5 nm in order to determine the optimum condition of the electrical characteristics for the devices. The on-current level of the FinFETs with a curvature radius of 5 nm of fin top edge was 24.45% larger than that of the FinFETs with a cuboid fin. The electron current density and the electron mobility of the fin top edge for the FinFETs were larger than those for the FinFETs with a cuboid fin. The electrical characteristics of the FinFETs with a curvature radius of 5 nm for the fin top edge showed the best performance due to the largest expansion of the effective channel region. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502), and this work was partially supported by Samsung Electronics Co. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | FinFETs | en_US |
dc.subject | Fin Top Edge | en_US |
dc.subject | Effective Channel | en_US |
dc.subject | On-Current Level | en_US |
dc.subject | Electron Mobility | en_US |
dc.title | Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 18 | - |
dc.identifier.doi | 10.1166/jnn.2018.14986 | - |
dc.relation.page | 1837-1840 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Ahn, Joonsung | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2018011853 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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