Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si
- Title
- Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si
- Author
- 박원일
- Keywords
- INDUCED INVERSION LAYER; EMITTING TRANSISTORS; ENHANCED EFFICIENCY; PHOTOVOLTAICS; OXIDE; POWER
- Issue Date
- 2017-03
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v. 5, no. 12, page. 3183-3187
- Abstract
- Gate-tunable Schottky junction solar cells (SJSCs) based on graphene and graphene mesh electrodes on n-type Si are fabricated and the effect of the external gate voltage (V-g) on the photovoltaic characteristics is investigated. The power conversion efficiencies (PCEs) of both devices continuously increase with increasing absolute values of V-g. Importantly, despite the slightly lower PCE values at V-g = 0 V, the graphene mesh on Si SJSC shows more rapid enhancement of PCE values, from 5.7% to 8.1%, with V-g varied from 0 V to -1 V. The finite element simulation highlights the benefits of the graphene mesh electrodes from the non-uniform and dynamic modulation of potential distributions driven correlatively by a work function change in the graphene regions and electric-field penetration through the hole regions.
- URI
- https://pubs.rsc.org/en/content/articlelanding/2017/TC/C6TC05502H#!divAbstracthttps://repository.hanyang.ac.kr/handle/20.500.11754/113095
- ISSN
- 2050-7526; 2050-7534
- DOI
- 10.1039/c6tc05502h
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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