Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박원일 | - |
dc.date.accessioned | 2019-11-21T04:22:10Z | - |
dc.date.available | 2019-11-21T04:22:10Z | - |
dc.date.issued | 2017-03 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 5, no. 12, page. 3183-3187 | en_US |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | https://pubs.rsc.org/en/content/articlelanding/2017/TC/C6TC05502H#!divAbstract | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/113095 | - |
dc.description.abstract | Gate-tunable Schottky junction solar cells (SJSCs) based on graphene and graphene mesh electrodes on n-type Si are fabricated and the effect of the external gate voltage (V-g) on the photovoltaic characteristics is investigated. The power conversion efficiencies (PCEs) of both devices continuously increase with increasing absolute values of V-g. Importantly, despite the slightly lower PCE values at V-g = 0 V, the graphene mesh on Si SJSC shows more rapid enhancement of PCE values, from 5.7% to 8.1%, with V-g varied from 0 V to -1 V. The finite element simulation highlights the benefits of the graphene mesh electrodes from the non-uniform and dynamic modulation of potential distributions driven correlatively by a work function change in the graphene regions and electric-field penetration through the hole regions. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (MSIP) of Korea (no. 2015R1A2A2A11001426, no. 2016K1A4A3914691, no. 2016K1A3A1A32913360). H.-G.P. acknowledges support for this work from the NRF grant funded by the Korean government (MSIP) (no. 2009-0081565). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | INDUCED INVERSION LAYER | en_US |
dc.subject | EMITTING TRANSISTORS | en_US |
dc.subject | ENHANCED EFFICIENCY | en_US |
dc.subject | PHOTOVOLTAICS | en_US |
dc.subject | OXIDE | en_US |
dc.subject | POWER | en_US |
dc.title | Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 5 | - |
dc.identifier.doi | 10.1039/c6tc05502h | - |
dc.relation.page | 3183-3187 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Kim, Su Han | - |
dc.contributor.googleauthor | Lee, Jae Hyung | - |
dc.contributor.googleauthor | Park, Jin-Sung | - |
dc.contributor.googleauthor | Hwang, Min-Soo | - |
dc.contributor.googleauthor | Park, Hong-Gyu | - |
dc.contributor.googleauthor | Choi, Kyoung Jin | - |
dc.contributor.googleauthor | Il Park, Won | - |
dc.relation.code | 2017001484 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | wipark | - |
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