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Investigation of ultrathin Pt/ZrO2-Al2O3-ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy

Title
Investigation of ultrathin Pt/ZrO2-Al2O3-ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy
Author
전형탁
Keywords
MIM capacitor; Internal photoemission spectroscopy; Schottky barrier height
Issue Date
2017-02
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v. 17, no. 2, page. 267-271
Abstract
We report the Schottky barrier height (SBH) at metal-insulator interfaces in Pt/ZrO2-Al2O3-ZrO2(ZAZ)/TiN dynamic random access memory capacitors by analyzing the photoconductivity yield and internal photoemission (IPE) yield using IPE spectroscopy. The SBH values at the Pt/ZAZ and ZAZ/TiN interfaces in the Pt/ZAZ/TiN stack were found to be 2.77 and 2.18 eV, respectively. The SBH difference between the top electrode/oxide and bottom electrode/oxide interfaces is related to the work function difference between Pt and TiN, and the subgap defect state features (density and energy) of the given dielectric. By combining experimental analysis using IPE at the device level and ultraviolet photoelectron spectroscopy and spectroscopic ellipsometry at the film level, a band structure model is proposed. (C) 2016 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S1567173916303558?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/112796
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2016.12.004
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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