Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2019-11-20T11:45:57Z | - |
dc.date.available | 2019-11-20T11:45:57Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v. 17, no. 2, page. 267-271 | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1567173916303558?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/112796 | - |
dc.description.abstract | We report the Schottky barrier height (SBH) at metal-insulator interfaces in Pt/ZrO2-Al2O3-ZrO2(ZAZ)/TiN dynamic random access memory capacitors by analyzing the photoconductivity yield and internal photoemission (IPE) yield using IPE spectroscopy. The SBH values at the Pt/ZAZ and ZAZ/TiN interfaces in the Pt/ZAZ/TiN stack were found to be 2.77 and 2.18 eV, respectively. The SBH difference between the top electrode/oxide and bottom electrode/oxide interfaces is related to the work function difference between Pt and TiN, and the subgap defect state features (density and energy) of the given dielectric. By combining experimental analysis using IPE at the device level and ultraviolet photoelectron spectroscopy and spectroscopic ellipsometry at the film level, a band structure model is proposed. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by the Samsung Electronics Industry-University research program and the Nano Material Technology Development Program (NRF-2014M3A7B4049368) through the National Research Foundation (NRF) funded by the Ministry of Science, ICT, and Future Planning. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | MIM capacitor | en_US |
dc.subject | Internal photoemission spectroscopy | en_US |
dc.subject | Schottky barrier height | en_US |
dc.title | Investigation of ultrathin Pt/ZrO2-Al2O3-ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 17 | - |
dc.identifier.doi | 10.1016/j.cap.2016.12.004 | - |
dc.relation.page | 267-271 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Lee, Sang Yeon | - |
dc.contributor.googleauthor | Chang, Jaewan | - |
dc.contributor.googleauthor | Choi, Jaehyung | - |
dc.contributor.googleauthor | Kim, Younsoo | - |
dc.contributor.googleauthor | Lim, HanJin | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.contributor.googleauthor | Seo, Hyungtak | - |
dc.relation.code | 2017001952 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
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