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dc.contributor.author강보수-
dc.date.accessioned2019-08-27T06:04:54Z-
dc.date.available2019-08-27T06:04:54Z-
dc.date.issued2006-12-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v. 89, No. 24, Article no. 242903en_US
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://aip.scitation.org/doi/abs/10.1063/1.2404949-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/109991-
dc.description.abstractFerroelectric Bi3.25La0.75Ti3O12 (BLT) films were grown on Pt/Ti/SiO2/Si (Pt/Si), LaNiO3/Pt/Si, and LaNiO3/Si substrates using chemical solution deposition technique. X-ray diffraction analysis shows that films grown on conductive LaNiO3 electrodes had higher degree of (117) orientation as compared to that grown directly on Pt/Si substrate. High remanent polarization value (2P(r))similar to 43.14 mu C/cm(2) (E-c of 111 kV/cm) under an applied field of 396 kV/cm was obtained for BLT film on LaNiO3/Pt/Si as compared to a value of 26 mu C/cm(2) obtained for BLT film on Pt/Si directly. There was no degradation in the switchable polarization (P-sw-P-ns) after 10(10) switching cycles. (c) 2006 American Institute of Physics.en_US
dc.description.sponsorshipThis work was supported as a Laboratory Directed Research and Development Project at Los Alamos National Laboratory under the United States Department of Energy.en_US
dc.language.isoen_USen_US
dc.publisherAMER INST PHYSICSen_US
dc.titleEffect of conductive LaNiO3 electrode on the structural and ferroelectric properties of Bi3.25La0.75Ti3O12 filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2404949-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorJain, M.-
dc.contributor.googleauthorKang, B. S.-
dc.contributor.googleauthorJia, Q. X.-
dc.relation.code2007200866-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidbosookang-
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