Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2019-08-27T06:04:54Z | - |
dc.date.available | 2019-08-27T06:04:54Z | - |
dc.date.issued | 2006-12 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 89, No. 24, Article no. 242903 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/abs/10.1063/1.2404949 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/109991 | - |
dc.description.abstract | Ferroelectric Bi3.25La0.75Ti3O12 (BLT) films were grown on Pt/Ti/SiO2/Si (Pt/Si), LaNiO3/Pt/Si, and LaNiO3/Si substrates using chemical solution deposition technique. X-ray diffraction analysis shows that films grown on conductive LaNiO3 electrodes had higher degree of (117) orientation as compared to that grown directly on Pt/Si substrate. High remanent polarization value (2P(r))similar to 43.14 mu C/cm(2) (E-c of 111 kV/cm) under an applied field of 396 kV/cm was obtained for BLT film on LaNiO3/Pt/Si as compared to a value of 26 mu C/cm(2) obtained for BLT film on Pt/Si directly. There was no degradation in the switchable polarization (P-sw-P-ns) after 10(10) switching cycles. (c) 2006 American Institute of Physics. | en_US |
dc.description.sponsorship | This work was supported as a Laboratory Directed Research and Development Project at Los Alamos National Laboratory under the United States Department of Energy. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.title | Effect of conductive LaNiO3 electrode on the structural and ferroelectric properties of Bi3.25La0.75Ti3O12 films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2404949 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Jain, M. | - |
dc.contributor.googleauthor | Kang, B. S. | - |
dc.contributor.googleauthor | Jia, Q. X. | - |
dc.relation.code | 2007200866 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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