Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires
- Title
- Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires
- Author
- 심상완
- Keywords
- Silicon nanowires; terahertz (THz); ultrafast spectroscopy
- Issue Date
- 2015-05
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v. 5, No. 4, Page. 605-612
- Abstract
- The surface-trap mediated carrier recombination is a crucial feature in characterizing the optoelectronic properties of nanowires (NWs). Due to the one-dimensional characteristics, the photoexcited carriers experiences multiple carrier interactions in the transverse direction such that strong carrier-carrier interactions are expected to play an important role in the NW carrier recombination. Here, using ultrafast optical-pump and terahertz-probe spectroscopy, we show that the Auger scattering significantly reduces the trap-mediated decay process. Systematic studies on bulk Si, bundled, individual, and encapsulated (reduced surface-trap density) SiNWs reveal that the effect of Auger recombination exhibits strong pump-fluence dependence depending on the surface-treatment condition.
- URI
- https://ieeexplore.ieee.org/abstract/document/7109945https://repository.hanyang.ac.kr/handle/20.500.11754/105984
- ISSN
- 2156-342X
- DOI
- 10.1109/TTHZ.2015.2428619
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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