Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심상완 | - |
dc.date.accessioned | 2019-05-27T02:35:06Z | - |
dc.date.available | 2019-05-27T02:35:06Z | - |
dc.date.issued | 2015-05 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v. 5, No. 4, Page. 605-612 | en_US |
dc.identifier.issn | 2156-342X | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/7109945 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/105984 | - |
dc.description.abstract | The surface-trap mediated carrier recombination is a crucial feature in characterizing the optoelectronic properties of nanowires (NWs). Due to the one-dimensional characteristics, the photoexcited carriers experiences multiple carrier interactions in the transverse direction such that strong carrier-carrier interactions are expected to play an important role in the NW carrier recombination. Here, using ultrafast optical-pump and terahertz-probe spectroscopy, we show that the Auger scattering significantly reduces the trap-mediated decay process. Systematic studies on bulk Si, bundled, individual, and encapsulated (reduced surface-trap density) SiNWs reveal that the effect of Auger recombination exhibits strong pump-fluence dependence depending on the surface-treatment condition. | en_US |
dc.description.sponsorship | The work of C. In, J. Choi, S. Sim, J. Kim, T. Kim, and H. Choi was supported by National Research Foundation of Korea (NRF) through the government of Korea (MSIP) under Grant NRF-2011-0013255, Grant NRF-2009-0083512, and Grant WCI 2011-001, by the Yonsei University Yonsei-SNU Collaborative Research Fund of 2014, and by the Yonsei University Future-leading Research Initiative of 2014. The work of J. Seo, H. Kwon, and T. Lee was supported by Mid-career Researcher Program through NRF grant funded by the MEST 2014R1A2A2A09053061. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Silicon nanowires | en_US |
dc.subject | terahertz (THz) | en_US |
dc.subject | ultrafast spectroscopy | en_US |
dc.title | Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 5 | - |
dc.identifier.doi | 10.1109/TTHZ.2015.2428619 | - |
dc.relation.page | 605-612 | - |
dc.relation.journal | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | - |
dc.contributor.googleauthor | In, Chihun | - |
dc.contributor.googleauthor | Seo, Jungmok | - |
dc.contributor.googleauthor | Kwon, Hyukho | - |
dc.contributor.googleauthor | Choi, Jeongmook | - |
dc.contributor.googleauthor | Sim, Sangwan | - |
dc.contributor.googleauthor | Kim, Jaeseok | - |
dc.contributor.googleauthor | Kim, Taeyong | - |
dc.contributor.googleauthor | Lee, Taeyoon | - |
dc.contributor.googleauthor | Choi, Hyunyong | - |
dc.relation.code | 2015011400 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | swsim | - |
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