DDR4 SDRAM; one row hammering; retention time; total ionizing dose (TID)
Issue Date
2018-05
Publisher
IEEE
Citation
2018 IEEE International Reliability Physics Symposium (IRPS), Page. PSE.21-PSE.25
Abstract
This paper investigates the Total Ionizing Dose (TID) effect on DDR4 SDRAM, using 60Co gamma-rays. Although retention time degraded with 830 Gy(Si) exposure, no retention errors were observed at the retention time of 64-ms and temperature of 80 °C. Unlike retention time degradation, the significant degradation in one-row hammering threshold was observed. The threshold was reduced by up to 113 k with tRP 53.75 ns—67% reduction from pre-irradiation values.