Repository at Hanyang UniversityCOLLEGE OF ENGINEERING SCIENCES[E](공학대학)ELECTRICAL ENGINEERING(전자공학부)Articles
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 백상현 | - |
| dc.date.accessioned | 2019-05-22T06:18:27Z | - |
| dc.date.available | 2019-05-22T06:18:27Z | - |
| dc.date.issued | 2018-05 | - |
| dc.identifier.citation | 2018 IEEE International Reliability Physics Symposium (IRPS), Page. PSE.21-PSE.25 | en_US |
| dc.identifier.issn | 1938-1891 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/8353690 | - |
| dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/105502 | - |
| dc.description.abstract | This paper investigates the Total Ionizing Dose (TID) effect on DDR4 SDRAM, using 60Co gamma-rays. Although retention time degraded with 830 Gy(Si) exposure, no retention errors were observed at the retention time of 64-ms and temperature of 80 °C. Unlike retention time degradation, the significant degradation in one-row hammering threshold was observed. The threshold was reduced by up to 113 k with tRP 53.75 ns—67% reduction from pre-irradiation values. | en_US |
| dc.description.sponsorship | This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B2002325) | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | DDR4 SDRAM | en_US |
| dc.subject | one row hammering | en_US |
| dc.subject | retention time | en_US |
| dc.subject | total ionizing dose (TID) | en_US |
| dc.title | Study of TID effects on one row hammering using gamma in DDR4 SDRAMs | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1109/IRPS.2018.8353690 | - |
| dc.relation.page | 1-5 | - |
| dc.contributor.googleauthor | Yun, Donghyuk | - |
| dc.contributor.googleauthor | Park, Myungsang | - |
| dc.contributor.googleauthor | Lim, Chulseung | - |
| dc.contributor.googleauthor | Baeg, Sanghyeon | - |
| dc.sector.campus | E | - |
| dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
| dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
| dc.identifier.pid | bau | - |
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