Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2019-05-13T02:45:36Z | - |
dc.date.available | 2019-05-13T02:45:36Z | - |
dc.date.issued | 2009-05 | - |
dc.identifier.citation | ADVANCED FUNCTIONAL MATERIALS, v. 19, No. 10, Page. 1587-1593 | en_US |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.200801032 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/103940 | - |
dc.description.abstract | An effective stacked memory concept utilizing all-oxide-based device components for future high-density nonvolatile stacked structure data storage is developed. GaInZnO (GIZO) thin-film transistors, grown at room temperature, are integrated with one-diode (CuO/InZnO)-one-resistor (NiO) (1D-1R) structure oxide storage node elements, fabricated at room temperature. The low growth temperatures and fabrication methods introduced in this paper allow the demonstration of a stackable memory array as well as integrated device characteristics. Benefits provided by low-temperature processes are demonstrated by fabrication of working devices over glass substrates. Here, the device characteristics of each individual component as well as the characteristics of a combined select transistor with a 1D-1R cell are reported. X-ray photoelectron spectroscopy analysis of a NiO resistance layer deposited by sputter and atomic layer deposition confirms the importance of metallic Ni content in NiO for bi-stable resistance switching. The GIZO transistor shows a field-effect mobility of 30 cm(2) V-1 s(-1), a V-th of +1.2V, and a drain current on/off ratio of up to 10(8), while the CuO/InZnO heterojunction oxide diode has forward current densities of 2 x 10(4) A cm(-2). Both of these materials show the performance of state-of-the-art oxide devices. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | HIGH-SPEED | en_US |
dc.subject | NIO FILMS | en_US |
dc.subject | SWITCH | en_US |
dc.title | Low-temperature-grown transition metal oxide based storage materials and oxide transistors for high-density non-volatile memory | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/adfm.200801032 | - |
dc.relation.journal | ADVANCED FUNCTIONAL MATERIALS | - |
dc.contributor.googleauthor | Lee, Myoung-Jae | - |
dc.contributor.googleauthor | Kim, Sun I. | - |
dc.contributor.googleauthor | Lee, Chang B | - |
dc.contributor.googleauthor | Yin, Huaxiang | - |
dc.contributor.googleauthor | Ahn, Seung-Eon | - |
dc.contributor.googleauthor | Kang, Bo S. | - |
dc.contributor.googleauthor | Kim, Ki H. | - |
dc.contributor.googleauthor | Park, Jae C | - |
dc.contributor.googleauthor | Kim, Chang J | - |
dc.contributor.googleauthor | Song, Ihun | - |
dc.contributor.googleauthor | Kim, Sang W | - |
dc.contributor.googleauthor | Stefanovich, Genrikh | - |
dc.contributor.googleauthor | Lee, Jung H | - |
dc.contributor.googleauthor | Chung, Seok J | - |
dc.contributor.googleauthor | Kim, Yeon H | - |
dc.contributor.googleauthor | Park, Youngsoo | - |
dc.relation.code | 2009200210 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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